HomeControlling Complex Electronic Materials

Controlling Complex Electronic Materials

logo_irg_1IRG Senior Participants:
Darrell Schlom (MatSci, co-leader), Kyle Shen (Phys, co-leader), Joel Brock (ApplPhys), J. C. Séamus Davis (Phys), Craig Fennie (ApplPhys), Eun-Ah Kim (Phys), Lena Fitting Kourkoutis (ApplPhys), Andrew Millis (Phys, Columbia Univ.), David Muller (ApplPhys)
Collaborators: R. Hennig (MatSci, Cornell), S. A. Kivelson (Stanford Univ.), M. Lawler (SUNY Binghamton), A. P. Mackenzie (MPI Chemical Physics, Germany), J. Mannhart (MPI Solid State, Germany), P. Schiffer (Univ. Illinois Urbana- Champaign), J. Schubert (Research Centre Jülich, Germany), R. Uecker (Leibniz Institute for Crystal Growth, Germany)

The theme of this IRG is to understand and control complex electronic materials (CEMs) where quantum many-body interactions can produce spectacular electronic and magnetic properties, such as colossal magnetoresistance, giant thermoelectric power, spinpolarized “half-metallic” ferromagnets, high temperature superconductivity, huge electric field effects, and many forms of nanoscale electron self-organization. Starting from materials that are reasonably well described by current theory, we systematically perturb the electronic structure of the targeted materials through experimentally-accessible changes in electron overlap or carrier density, then use the observed changes in materials properties to drive advances in electronic structure theory. The combination of insights from theory and experiment will allow us to optimize the physical properties we are attempting to enhance, allowing us to “close the loop” between growth, experiment, and theory. Our long-term goal is to develop a general approach to optimizing properties in a wide range of materials, including high-temperature superconductors.

E-mail IRG leaders: Darrell Schlom and Kyle Shen

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